Iterative scheme for 1- and 2- dimensional d.c.-transistor simulation
J.W. Slotboom · Electronics Letters · 1969
A numerical iterative scheme is presented for the solution of the 1- and 2-dimensional semiconductor d.c. transport equations. This scheme is applied to an n-p-n transistor structure. Input data are geometry, doping profile, boundary conditions and, optionally, mobility dependencies and generation-recombination law.