G4-FET modeling for circuit simulation by adaptive neuro-fuzzy training systems
Hossein Aghababa, Behzad Ebrahimi, Mehdi Saremi, Vahid Moalemi, Behjat Forouzandeh · IEICE Electronics Express · 2012
G4-FET has attracted attention as an emerging device for the future generations of semiconductor industry. This paper is intended to propose a model representing the characteristics of G4-FET device in order to perform circuit simulations. The modeling approach is established upon the neuro-fuzzy technique whose main strength is that they are universal approximators with the ability to solicit interpretable IF-THEN rules. The accuracy of the proposed model is verified by HSPICE circuit simulations.