Single flux-quantum Josephson memory cell using a new threshold characteristic
I. Kurosawa, Akihiko Yagi, Hiroshi Nakagawa, Hisao Hayakawa · Applied Physics Letters · 1983
A new single flux-quantum Josephson memory cell in which nondestructive readout (NDRO) operations can be realized with a simple circuit configuration is proposed. The memory cell utilizes a new type of threshold characteristics in an equivalent asymmetric dc superconducting quantum interference device (SQUID) consisting of a three-junction SQUID gate and a single junction. NDRO operation has been successfully demonstrated in an experimental memory circuit.