Techniques for the measurement of source and drain series resistance in m.o.s. transistors
P.J.T. Mellor · Proceedings of the Institution of Electrical Engineers · 1971
Three methods for measuring the source and drain resistance of m.o.s. transistors operating in the unsaturated region are described. The results obtained on a number of simple m.o.s. transistors are presented to illustrate and compare each method and to indicate the significance of such measurements.