About multi-stable bipolar structure approximation by system of virtual bistable semi-conductor elements
Hamlet Karayan, A.H. Amakaryan, Sh.G. Martirosyan, R.A. Yolchyan, H.H. Vardanyan, M.A. Khudabashyan · 2003
A new method of modeling of bipolar inhomogeneous (by the type of conduction) semiconductor structures containing N>3 electron-hole junctions by the system of virtual bistable elements is suggested. The actual problem is connected with the possibility of creating multistable elements on the basis of such structures, known as polystores, the state of electroconductivity of which is controlled by external electric or optical fields. A mathematical model is introduced that gives an opportunity to approximate the multistable structure as a union of virtual bistable and real monostable structures and exchanging the model of polytransistor analogy of Moll-Ebers which does not take into consideration the effect of plasma-field interaction (EPFI) in inhomogeneous electron-hole plasma.