Low-power and low-voltage fully parallel content-addressable memory
Chi-Sheng Lin, Kuan‐Hua Chen, Bin-Da Liu · 2003
This paper presents a novel VLSI architecture for a fully parallel static type content addressable memory with low-power, low-voltage, and high-reliability features. In this paper, the proposed CAM word structure adopts a static pseudo nMOS circuit that not only improves system reliability, but also prevents using a clock signal to drive the overall system. In order to reduce static power occurring in the proposed CAM word structure, a precomputation approach is used to turn off a major part of the pseudo nMOS circuits. The whole design was simulated by HSPICE with the TSMC 0.35 /spl mu/m SPQM CMOS process. With a 128 words by 30 bits CAM size, the simulation results indicate that the proposed circuit operates up to 250 MHz with a power-performance metric less than 59 fJ/bit/search.