Pressure sensors on base of bipolar silicon strain sensitive transistors
G. G. Babichev, Sergei I. Kozlovskiy, В. А. Романов · 2002
Theoretical and experimental studies were made of characteristics of bipolar strain sensitive transistors (tensotransistors). We describe the constructions and operating principles of tensotransistors, report theoretical calculation aimed to optimise the parameters of devices relative to higher sensitivity and energy consumption.