Ferroelectric(Fe)-NAND flash memory with non-volatile page buffer for data center application enterprise Solid-State Drives (SSD)
Teruyoshi Hatanaka, Ryoji Yajima, Takeshi Horiuchi, Shouyu Wang, Xizhen Zhang, Minoru Takahashi, Shigeki Sakai, Ken Takeuchi · 2009
A ferroelectric(Fe)-NAND flash memory with a non-volatile (NV) page buffer is proposed. The data fragmentation in a random write is removed by introducing a batch write algorithm. As a result, the SSD performance can double. The NV-page buffer realizes a power outage immune highly reliable operation. With a low program/erase voltage, 6V and a high endurance, 100Million cycles, the proposed Fe-NAND is most suitable for a highly reliable high-speed low power data center application enterprise SSD.