Delay testing of SOI circuits: Challenges with the history effect
Eric W. MacDonald, Nur A. Touba · 2003
Testing Partially-Depleted Silicon-On-Insulator (PD-SOI) integrated circuits presents new challenges that were not concerns in previous bulk CMOS technologies. Gates are affected by a variation in delay based on threshold voltage fluctuations. The fluctuations are dependent on the switching history of the device and this poses a serious challenge with regard to testing delays. To ensure worst-case operation, pre-conditioning of the path is necessary prior to a delay test. This paper provides background on SOI device operation and describes why and how pre-conditioning is accomplished. It is shown that a three-pattern delay test where the V1 and V3 patterns are the same is required to pre-condition the path for worst-case delay. Two novel scan latch designs that are capable of applying the three-pattern tests are presented.