4-Times Faster Rising Vpass (10V), 15% Lower Power Vpgm (20V), Wide Output Voltage Range Voltage Generator System for 4-Times Faster 3D-integrated Solid-State Drives
Teruyoshi Hatanaka, Ken Takeuchi · 2011
A wide output voltage, V OUT , range from 10V to 20V voltage generator system is proposed for the 3D-integrated NAND flash Solid-State Drives, SSDs. The circuits are fabricated with the smart mix and match of the 0.18um standard CMOS, the low voltage and high voltage NAND flash memory technologies. The two-stage boost converter is proposed for the program pass voltage, V PASS , in the lower V OUT , 10V, and the heavy load capacitance, C OUT , condition. The measured rising time is four times shorter than the conventional single-stage boost converter [1,2]. In addition, the constant current boosting scheme is proposed for the program voltage, V PGM , in the higher V OUT , 20V, and the light C OUT condition. The power consumption decreases by 15%. As a result, the SSD performance improves by 4 times.