A new approach of NAND flash cell trap analysis using RTN characteristics
Daewoong Kang, Sungbok Lee, Hyun-Mog Park, Dong-jun Lee, Jim Kim, Jvmho Seo, Chikyoung Lee, Cheol Ock Song, Chang-Sub Lee, Hyungcheol Shin, Jaihyuk Song, Haebum Lee, Jeong-Hyuk Choi, Young-Hyun Jun · Symposium on VLSI Technology · 2011
We measured RTN characteristics in NAND flash cell array and test structure having 27 nm design rule depending on different program and erase states. From these measured results, we analyzed the trap properties along the active width direction from of NAND flash cell. Using special analysis methods, we verified the validity of this characterization tool and applied it to various processed NAND flash memory cells.