A triangular mesh generation method suitable for the analysis of complex MOS device structures
Shigetaka Kumashiro, I. Yokota · 2002
A fully automatic triangular mesh generation method which can correctly handle the MOS inversion current along any arbitrary shaped channel is proposed. The key idea of this method is to introduce an interface protection layer which consists of rectangular mesh locally conformed to the material interface. The performance of this method is verified through an oblique and a SLIT transistors simulation.>