CHARACTERIZATION AND HIGH- LEVEL MODELING OF SOI RING OSCILLATORS UNDER IRRADIATION.
Irene Jiménez Martínez, Pierre Delatte, Guy Berger, Denis Flandre · Digital Access to Libraries (Université catholique de Louvain (UCL), l'Université de Namur (UNamur) and the Université Saint-Louis (USL-B)) · 2000
In absence of radiation, the frequency spectrum of the output signal of ring oscillator presents a gaussian distribution over the nominal frequency (approx. 145,14 MHz) caused by the intrinsic noise of the transistors. During irradiation, the measured spectrum presents additional peaks at frequencies near the nominal frequency (figure 1). This indicates that the SEE on the output phase is strong enough to be interpreted as a change in the frequency of oscillation.