Novel bi-directional tunneling NOR (BiNOR) type 3-D flash memory cell
E.C.-S. Yang, Cheng-Jye Liu, Tien‐Sheng Chao, Ming-Chi Liaw, C.C.-H. Hsu · 1999
A novel 3D flash memory, BiNOR, with a localized shallow P-well is proposed for high speed, low power and high reliability applications. Low power bi-directional tunneling program/erase is realized in a NOR array, which guarantees better tunnel oxide reliability, where previously bi-directional tunneling program/erase could only be performed in NAND arrays. Moreover, high read performance is achieved by more than 15% conduction current enhancement due to the 3D cell structure.