Gallium Arsenide Pilot Line for High Performance Components
Robert C. Vehse, E. F. Lapham · 1990
This contractor for a Gallium Arsenide Pilot Line for High Performance Components was awarded to AT and T in March, 1987. The program goal was to develop a complete facility for fabricating GaAs memory and logic chips. To meet this goal, we provided a User-Friendly CAD system, a self-aligned GaAs E/D heterostructure FET technology, and a facility for fabricating GaAs circuits on 3 wafers. We designed and fabricated several process tester circuits, two 4K SRAMs and six 3000-5000 gate logic circuits. This Final Report describes the accomplishments of the program. Besides this overview, the Report is divided into four sections: Circuit Designs, Design Tools, and Test Results; Pilot Production and Process Development; Radiation Hardness and Reliability; and Lessons Learned During the Contract. Also, there are four appendices: the Pilot Line III Design Rules, Process Control Modules, the Advanced Technology, and the industry Survey of Availability High-Speed Packages.