Synchronous rectifier circuit with DC biasing transformer
K. Koda, Kouhei Kuwabara, E. Miyachika · 2002
This paper introduces a new method of MOSFET gate-drive for self-synchronized rectifier circuits with DC biasing transformers. The voltage of the secondary winding is always rectangular, thus the commutation MOSFET gate can be fully-driven during the off-time of the primary main switch. Using this method, a conversion efficiency of 91% at an output power of 50 W (5 V, 10 A) can be obtained.