Simulation of 1/fαnoise of semiconductor devices
L. Hasse · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 1992
The 1/f(alpha ) noise model of semiconductor devices as a result of the summation of many burst noise components with different characteristic frequencies foi as well as its physical interpretation for a p-n junction has been presented. The error of spectrum representation depends on the density of frequencies foi (per unit frequency) and the bandwidth depends on the number of components N. A change of exponent (alpha) has been achieved by the exponential distribution of frequencies foi. For random number generation, the power-residue generator has been applied. The computer program during initialization calculates the required number of components N, number of the time samples K, and duration of the simulation process for the assumed value of an error.