A novel low-voltage hot-carrier (LVHC) programming method for scaled NAND flash cell
Wen-Jer Tsai, Pei-Hsuan Tsai, Jen-Wei Huang, Siao-Cheng Yan, C.H. Cheng, C. C. Cheng, Y.J. Chen, C. H. Lee, M.C. Hsu, T. T. Han, T.C. Lu, K.C. Chen, Chih-Yuan Lu · Symposium on VLSI Technology · 2011
A novel low-voltage, hot-carrier programming method for NAND flash cell is presented. By suitably controlling the NAND string's conductance, a sufficient program current along with a high heating field is induced to cause efficient hot-carrier injection. Comprehensive studies on bias and timing effects are performed on 75nm-node floating-gate NAND cells. This programming method greatly alleviated the requirements for high-voltage supporting devices and their fabrication process, as the operating voltage can be less than 12V. Besides, it is less sensitive to process variation and possesses better reliability than conventional FN programming.