A 1.8 V 2 Gb NAND flash memory for mass storage applications
June Lee, Sung-Soo Lee, Oh-Suk Kwon, Kyeong-Han Lee, Kyong-Hwa Lee, Dae-Seok Byeon, Inyoung Kim, Young-Ho Lim, Byung-Soon Choi, Jong-Sik Lee, Wang-Chul Shin, Jeong-Hyuk Choi, Kang-Deog Suh · 2003
A 1.8 V 2 Gb NAND flash memory is fabricated in a 90 nm process resulting in a 141 mm/sup 2/ die and a 0.044 /spl mu/m/sup 2/ effective cell. To achieve the high level of integration, critical layers are patterned with KF photolithography and phase-shift masks with proximity correction.