Use of charge-coupled devices to study electrically active defects near a semiconductor surface
O. S. Frolov, Z.I. Maksimenko, Y.P. Medvedev, V.L. Perevertailo · OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information) · 1985
The authors analyze certain methodological questions about the c-t method of studying electrically active defects in the surface layer of silicon and they study single defects in silicon based on the use of surface charge coupled devices (CCDs). They conclude that the method of accumulating generated charge in a CCD array permits one effectively to measure the generation parameters of individual defects in silicon, to study the nature of electrically active defects, and to evaluate the production and use of MOS devices.