A Novel Flash Memory Device Based on Recessed Channel Strucure
Kyoung-Rok Han, Ki-Heung Park, Sang-Goo Jung, Young‐Min Kim, Jong-Ho Lee · 2006
In this work, we propose a flash memory structure that improves Vthspreading, device scalability and performance, and obtain the programming/erasing time through extensive device simulation. We also show the basic concept of the proposed structure having aggressively scaled tunneling characteristic from using nitride for control gate