TEFET-a high density, low erase voltage, trench flash EEPROM
Di-Son Kuo, M. Simpson, Len Tsou, S. Mukherjee · 2002
A novel three-dimensional flash EEPROM cell named the TEFET (Trench Embedded Field Enhanced Tunneling) has been developed for ultra high density memory applications. The cell technology is compatible with standard CMOS processes. It provides very small cell size, large read current, low erase voltage, greatly improved cycling endurance, and excellent scalability as compared to conventional planar cells.>