Highly scalable NAND-type PHINES flash memory for data flash applications
C.C. Yeh, Yen‐Chen Liao, Wen-Jer Tsai, Tien‐Chang Lu, T.F. Ou, Hsuan‐Ling Kao, Tahui Wang, WenChin Ting, Joseph Ku, Chih-Yuan Lu · 2006
In this paper, two NAND-type PHINES flash memory architectures (1 bit/cell and physically 2 bit/cell) are proposed for mass storage applications. PHINES nitride trapping storage flash memory features high storage density, low power operation, good reliability, simple process, and high programming throughput. Fifteen-nm generation is feasible for future flash memory technology