A long data retention SOI-DRAM with the body refresh function
Siera A. Tomishima, Fukashi Morishita, M. Tsukude, T. Yamagata, K. Arimoto · 2002
We have proposed a body refresh function and circuits for SOI DRAMs. The body refresh utilizes a swinging of the bit line and gives stable body potential, long dynamic data retention time and low power consumption without any increase in the chip area.