Numerical solution of a diffusion problem with segregation at a moving interface : (preprint)
Miente Bakker, D. Hoonhout · Centrum Wiskunde & Informatica (CWI), the national research institute for mathematics and computer science in the Netherlands · 1980
The transport of impurities implanted in silicon, which accompanies the annealing of implantation damage by means of pulsed-laser irradiation, is described by a one-dimensional diffusion equation whose solution is discontinuous at a moving interior point.This discontinuity is due to seggregation of mass at the liquid/solid interface during (re)solidification.This paper describes the pitfalls the numerical analyst will encounter and how he can cope with them.