A 1.8-V operation RFCMOS transceiver for Bluetooth
H. Komurasaki, T. Heima, Takuma Miwa, Kaoru Yamamoto, H. Wakada, Ikuo Yasui, Masayoshi Ono, T. Sano, Hisayasu SATO, Takahiro Miki, N. Kato · 2003
This paper describes a single-chip Bluetooth transceiver LSI, which uses a standard 0.18 /spl mu/m bulk CMOS process. It can operate at a supply voltage of 1.8 V, and includes even a low loss transmit/receive antenna switch (SW) in order to realize high level integration. For lower chip area, a channel selection filter consists of simple linearized source-coupled pairs, and the transceiver occupies 10.2 mm/sup 2/.