A configurable TCAM/BCAM/SRAM using 28nm push-rule 6T bit cell
Supreet Jeloka, Naveen Bharathwaj Akesh, Dennis Sylvester, David T. Blaauw · 2015
Conventional Content Addressable Memory (BCAM and TCAM) uses specialized 10T / 16T bit cells that are significantly larger than 6T SRAM cells. We propose a new BCAM/TCAM that can operate with standard push-rule 6T SRAM cells, reducing array area by 2-5× and allowing reconfiguration of the CAM as an SRAM. Using a 6T 28nm FDSOI SRAM bit cell, the 64×64 (4kb) BCAM achieves 370 MHz at 1V and consumes 0.6fJ/search/bit.