A novel self-aligned shallow trench isolation cell for 90 nm 4 Gbit NAND flash EEPROMs
Masayuki Ichige, Yoshinori Takeuchi, K. Sugimae, Akira Sato, M. Matsui, T. Kamigaichi, H. Kutsukake, Y. Ishibashi, Masato Saito, Shinji Mori, H. Meguro, Shinichi Miyazaki, Takanobu Miwa, S Takahashi, T. Iguchi, N. Kawai, S. Tamon, N. Arai, Hiroshi Kamata, T. Minami · 2004
Recently, the new memory structures, those FG and AA are completely self aligned, are qualified for 4Gb NAND flash memory in 90 nm technology node. This paper describes that the new structures and these electrical characteristics and also peripheral transistors' performances.