Reliability enhancement of 1Xnm TLC for cold flash and millennium memories
Senju Yamazaki, Shuhei Tanakamaru, Sakuya Suzuki, Tomoko Ogura Iwasaki, Shogo Hachiya, Ken Takeuchi · 2015
Endurance and retention are measured in 1Xnm Triple Level Cell (TLC) NAND and the flexible nLC scheme (flex-nLC) is proposed to improve reliability. This method enables the use of lowest-cost TLC NAND as is, in long term storage applications such as cold flash and digital archive: millennium memory, which have 20 and 1000 years retention, respectively.