An AND-type match-line scheme for energy-efficient content addressable memories
Jinn‐Shyan Wang, Hung-Yu Li, Chia‐Cheng Chen, Chingwei Yeh · 2005
An AND-type match-line scheme is fabricated in a 0.18 /spl mu/m 1.8V CMOS process. The 256/spl times/128b CAM achieves a faster search time and a 20% energy reduction compared with NOR designs. This AND-type circuit has a search time of 1.75ns with an energy of 0.57fJ/bit/search.