Design of 90nm 1Gb ORNAND/sup TM/ Flash Memory with MirrorBit/sup TM/ Technology
Tien-Chien Kuo, N. Yang, N. Leong, E. Wang, Fang-shi Lai, A. Lee, Hung-Pin Chen, SEKHAR REDDY M. CHANDRA, Yi-Ying Wu, T. Akaogi, A. Melik-Martirosian, A. Pourkeramati, J. Thomas, Mark VanBuskirk · 2006
Using the virtual ground array structure of 2 bits/cell MirrorBittrade technology, a 90nm, 1.8V ORNANDtrade product combining the advantages of both NOR and NAND is presented. Full NAND functionality and performance compatibility is shown, while maintaining the NOR advantages