Transient current testing of 0.25 μm CMOS devices
Bram Kruseman, Peter J. Janssen, Victor Zieren · 2003
Transient current testing (I/sub DDT/) has been often cited as an alternative and/or supplement to I/sub DDQ/ testing. The effectiveness of our I/sub DDT/ test method is compared with I/sub DDQ/ as well as with SA-based voltage testing for devices produced in 0.25 /spl mu/m technology. For these devices a large vector-to-vector spread in I/sub DDT/ is observed. This spread is investigated together with the die-to-die spread to determine a pass/fail criterion. The vector-to-vector spread is compensated by comparing the measured I/sub DDT/ values with those of a known good (golden) device. A hardware solution for an I/sub DDT/ monitor is presented which includes a correction for the golden device signature. Therefore real-time I/sub DDT/ testing on a digital tester without data-processing becomes feasible.