A 3.3 V 128 Mb multi-level NAND flash memory for mass storage applications
Tae-Sung Jung, Young-Joon Choi, Kang-Deog Suh, Byung-Hoon Suh, Jin‐Ki Kim, Young-Ho Lim, Yong-Nam Koh, Jong-Wook Park, Ki-Jong Lee, Jung‐Hoon Park, Kee-Tae Park, Jang-Rae Kim, Jeong-Hyong Lee, Hyung‐Kyu Lim · 2002
The NAND flash memory was originally designed to target solid-state mass storage applications. Key requirements of mass storage, low cost and high serial access throughput, have been achieved by sacrificing a non-critical feature, fast random access. For a quantum step in cost reduction, the multi-level cell is combined with NAND flash memory. This 128 Mb multi-level NAND flash memory stores two bits per cell by tight programmed cell threshold voltage (Vth) control and is made practical by significantly reducing program disturbs.