Modulation Code for Removing Error Patterns on 4-Level NAND Flash Memory
Dong-Hyuk Park, Jaejin Lee, Gi-Ju Yang · 2010
In the NAND flash memory storing two bits per cell, data is discriminated among four levels of electrical charges. We refer to these four levels as E, P1, P2, and P3 from the low voltage. In the statistics, many errors occur when E and P3 are stored at the next cells. Therefore, we propose a coding scheme for avoiding E-P3 or P3-E data patterns. We investigate two modulation codes for 9/10 code (9 bit input and 5 symbol codeword) and 11/12 code (11 bit input and 6 symbol codeword).